InGaN量子阱的离子注入及其在白光LED中的应用

It is an important progress in human illumination history and has a great effect on the development of human society and economy for the semiconductor white light emitting diodes (white light LED) to be developed and used as a new type of high efficient solid-state light source. In this application, the combination of quantum wells (QWs) and doping impurity ions as a whole is firstly suggested to act as a basic unit of lighting of white LED, which has the advantage of improving light emitting efficiency of the doping ions by means of the charge carriers of high density in the QWs, and it is favourable for producing white light LED free of phosphor. This research contains as follows: the ion implantation of Sm, Cr, Eu, Pr, Er and annealing, the charge and energy transfer mechanism between the charge carriers in the QWs and the doping impurity ions, the light emitting efficiency of the basic unit of QWs+doping -ions excited by different wavelength light, to make up white light by mixing of red and green light emitted from the unit of QWs+doping-ions and blue light from LED, preparation of white light LED free of phosphor. This research has two advantages of radiative recombination betweeen conduction and valency band of semiconductors and light emitting from doping ions in solid host materials. The two kinds of new LED structures free of phosphors are suggested in this application and a way of producing white light LED free of phoshor and wide band solid-state lighting devices is provided.

半导体白光发光二极管（白光LED）作为照明的新型高效固体光源，是人类照明史上又一次飞跃，经济和社会意义巨大。本项目首次提出以量子阱+掺杂离子的组合为发光基本单元，利用量子阱中高密度载流子来提高掺杂离子的激发及发光效率,制备无荧光粉白光LED。具体研究内容为：在InGaN量子阱中及阱外GaN膜中分别注入钐（Sm）、铬（Cr）、铕（Eu）、镨（Pr）、铒（Er）等离子及退火研究；量子阱中高密度载流子与掺杂离子之间的电荷及能量传输机制研究；量子阱+掺杂离子基本单元在特定波长的光激发下的发光效率研究；在蓝光LED激发下，量子阱+掺杂离子基本单元发射红光、绿光与LED发射蓝光混合成为白光的研究；无荧光粉的白光LED制备的研究。本项目结合了半导体带间发光及固体材料中离子发光的优点，提出了两种新颖无荧光粉LED结构，为无荧光粉白光LED及宽光谱固体发光器件制备研究提供了一条新的可能途径。

半导体白光发光二极管（白光 LED）作为照明的新型高效固体光源，经济和社会意义巨大。本项目进行了白光LED芯片的探索性研究。在GaN外延层和InGaN量子阱及阱附近的GaN中分别注入铕（Eu）、钐（Sm）、鋱（Tb）稀土离子及铬（Cr）过渡金属离子并退火研究；InGaN量子阱与注入离子之间电荷、能量传输的相关理论研究；基于双系列InGaN/GaN量子阱蓝光发射LED结构的结构及光学性质研究；做为LED荧光粉的CdSe与CdSe/ZnS量子点的合成及其稀土掺杂研究，GaN及CdS一维纳米材料制备及器件研究。成功制备了高效红光发射GaN：Eu材料及绿光发射材料；制备了CdSe/ZnS核壳结构量子点荧光材料和InGaN/GaN双系列量子阱蓝光发射LED芯片；制备了GaN纳米线和CdS纳米管及其紫外探测器。