CMOS APS图像传感器辐照效应实验及损伤机理研究

The CMOS APS image sensor is a novel solid image device which is developed rapidly recently, especially used in the space image systems such as the remote image, the star sensor and the solar sensor. When the CMOS APS image sensor is operated in the space or nuclear radiation environments, the radiation damage induce the dark signals increasing, the nosie increasing, and the dark signal spike generation. The radiation damage will impact the image qulity, and even induce the functional failure, which will severely threat the survival of the strategic weapens and the operation of the spacecrafts on the orbits. The correlative research is lacked in our country. With the extensive applications of the CMOS APS image sensor, the research of the radiation damage effects and the radiation hardening techniques are urgent. The experiments of the CMOS APS image sensor irradiated by the neutrons and γ rays will be carried out separately, and the experimental ruels of the displacement and the ionizing radiation damage are concluded. By combining the radiation experimental results with the transportation simulation of the radiation particles and the analysis of the theoretics, the physical mechanism of the radiation damage in the CMOS APS image sensor will be researched in depth. The physical mechanism of the displacement radiation induce the generation of the dark signal spike and the electric field enhancement effect will be demonstrated clearly. The research will provide the basis of the theories and experimental techniques for the radiation damage evaluation and hardening techniques of the CMOS APS image sensor.

CMOS有源像素（APS）图像传感器是近年来发展十分迅速的一种新型固态成像器件，在遥感成像、星敏感器和太阳敏感器等航天成像采集与处理方面具有独特的优势。CMOS APS图像传感器在空间辐射或核辐射环境中应用时，辐射损伤会诱发暗信号增大，噪声增大以及暗信号尖峰产生等现象，导致图像质量降低，严重时甚至出现功能失效，对战略武器生存和航天器在轨正常运行和效能发挥构成严重威胁。国内相关研究开展的很少，随着CMOS APS图像传感器的广泛应用，其辐照损伤效应和抗辐射加固技术亟待深入研究。本项目通过分别开展CMOS APS图像传感器中子和γ辐照效应实验，得到位移损伤和电离损伤效应实验规律，结合辐射粒子输运模拟计算和理论分析，弄清辐照损伤机理，阐述位移损伤诱发暗信号尖峰的产生机制及场增强效应的基本物理机制，将为CMOS APS图像传感器辐照损伤评估和抗辐照加固技术研究提供理论基础和实验技术支持。

CMOS有源像素（APS）图像传感器是近年来发展十分迅速的一种新型固态成像器件，在遥感成像、星敏感器和太阳敏感器等航天成像采集与处理方面具有独特的优势。CMOS APS图像传感器在空间辐射或核辐射环境中应用时，辐射损伤会诱发暗信号增大，噪声增大以及暗信号尖峰产生等现象，导致图像质量降低，严重时甚至出现功能失效，对航天器成像系统在轨正常运行和效能发挥构成严重威胁。辐射损伤已成为制约CMOS APS图像传感器在轨实现长寿命、高可靠应用的关键技术瓶颈。国内相关研究开展的很少，随着CMOS APS图像传感器的广泛应用，其辐照损伤效应和抗辐射加固技术亟待深入研究。本项目主要开展了如下研究工作：1）建立了CMOS APS图像传感器辐照效应参数测试系统，开展了辐射敏感参数测试方法研究；2）开展了CMOS APS图像传感器60Co γ总剂量辐照效应实验研究；分析了60Co γ电离辐照损伤效应实验规律；开展了CMOS APS图像传感器电离辐照损伤机理研究；开展了CMOS APS图像传感器中子位移辐照效应实验研究；分析了中子位移辐照损伤效应实验规律；开展了CMOS APS图像传感器位移辐照损伤机理研究；3）开展了中子位移损伤诱发CMOS APS图像传感器暗信号尖峰的产生机理和场增强效应出现的物理机制研究；深入分析了CMOS APS图像传感器辐照损伤物理机制研究。本项目研究获得的CMOS APS图像传感器60Co γ 射线总剂量辐照效应实验数据和反应堆中子位移辐照效应实验数据及由这些实验数据得出的总剂量效应和位移效应实验规律等重要结果，为国产CMOS APS图像传感器抗辐射加固设计提供了理论指导和试验支持，在国产CMOS APS图像传感器抗辐射加固设计实践中取得了良好的应用效果，研制的CMOS APS图像传感器产品抗辐射能力显著提高，有效提升了我国航天器成像系统的在轨生存能力与效能发挥，具有重要的国防应用前景。本项目研究成果中的实验方法和损伤机理为国产星用CMOS APS图像传感器抗辐射性能试验考核及加固提供了重要技术支撑。