具有梯度折射率效应的二次电光晶体M:KTN的生长制备和激光调制研究

Electro-optical modulation technique has a broad important application in laser technology based on its advantages such as high efficiency, high reliability, and fast response. The current development of laser technology demands the miniaturization and integration to the device, which put forward higher requirement on function enhance and function composite of the material. Aimed at the requirement of electro-optical modulation application, this project plan to design and prepare Kerr-Effect-Enhanced M:KTN crystal with gradient refractivity effect by the ion doped method..Design and prepare M:KTN crystals with different valence states, different concentration ion doped; Proven the doping concentration of ions in the crystal; Investigate the occupation of the doping ions in the lattice sites and the resulting influences on unit cell structure and valence bond structure. So to understand the physical mechanism of Kerr-effect-enhance and refractivity-amplify effect in the ion doped crystal. Link the communication between microscopic structure and macroscopic physical properties of the crystal. Through the combination of crystal growth and property characterization, design and prepare the M:KTN crystal with the best Kerr-Effect-Enhance and best refractive gradient by the following measures: changing the ion species and concentration, adjusting the ratio of raw material, optimizing the parameter of crystal growth process. Achieve the intensity, phase and propagation direction modulation of the laser based on the interaction of Kerr effect and graded refractivity effects in M:KTN crystal.

电光调制技术由于高效率、快响应等优点在激光技术领域有许多重要应用。当前激光技术的发展更加注重器件的小型化和集成化，对材料的功能增强与功能复合提出了更高要求。针对电光调制应用需求，本项目拟通过离子掺杂手段设计和制备具有梯度折射率效应的Kerr效应增强型M:KTN晶体。.设计并制备不同价态、不同浓度掺杂的M:KTN晶体；探明掺杂离子在晶体中的浓度分布规律；研究掺杂离子在晶格中的占位以及由此产生的对晶胞结构、价键结构的影响，进而理解离子掺杂条件下电光效应增强和折射率增大的物理机制，沟通晶体材料微观结构与宏观物理性质之间的联系；通过晶体生长和性能表征的结合，从掺杂离子种类与浓度选择、原料配比调整、工艺参数优化等各个方向设计制备具有最优Kerr效应增强和最优折射率梯度的M:KTN晶体，实现基于M:KTN晶体Kerr效应和梯度折射率效应相互作用下激光强度、相位和传播方向等特征的调制。

电光调制技术由于高效率、快响应等优点在激光技术领域有许多重要应用。当前激光技术的发展更加注重器件的小型化和集成化，对材料的功能增强与功能复合提出了更高要求。本项目针对电光调制应用需求，通过离子掺杂手段设计和制备具有梯度折射率效应的Kerr效应增强型M:KTN晶体。设计并制备了不同价态、不同浓度掺杂的M:KTN晶体，重点研究掺杂离子进入晶格后的占位情况和价键结构变化；研究了掺杂离子在晶格中的占位以及由此产生的对晶胞结构、价键结构的影响，进而解释了离子掺杂条件下电光效应增强和折射率增大的物理机制；通过晶体生长和性能表征的结合，从掺杂离子种类与浓度选择、原料配比、工艺参数优化等各个方向设计制备了具有最优Kerr效应增强和最优折射率梯度的M:KTN晶体，实现了基于M:KTN晶体Kerr效应和梯度折射率效应相互作用下激光强度、相位和传播方向等特征的调制；建立了M：KTN系列晶体的组分－方向－电光系数-折射率梯度之间的关系，实现了激光传播方向的电光偏转调制和超低电压光开关设计，调制效率达到国际先进水平。