硅氧氮介质膜表面自组装纳米金属岛的研究

Silicon-oxygen-nitrogen films and nano-crystal silicon have been formed by thermo-oxidation in an ammonia ambience and by etching photo-electro-chemically.in hydrogen fluoride solution respectively. Electrical and optical characteristics of a nano-crystal silicon suspension have been studied and found that photoluminescence intensity of the suspension reduced exponentially with the electrophoretic time. The nanocrystal silicon particles have been assembled on the surface of SiON, metal of other semiconductors and hotoluminescence, electro-luminescence or UV-visible.absorption of the various assembled system have been measured. The nanocrystal.silicon surfaces have been modified by SiON, SnO2, ZnO, ZnS, Pt, Ni, Cu, Ag and.red, yellow, green and blue photoluminescence had been observed at room temperature with the modified systems.Hydrogen catalyzed nanometer size oxygen precipitation in single crystal silicon has been studied firstly. Micro-defects in the bulk and denuded zone on the surface were obtained by denuded annealing and precipitation annealing process. FZ(H) silicon gettering wafers have been used to manufacture thyristor, increasing 13% of the products up to standard and the corresponding achievement has been appraised by Educational Department of Shandon Province.A new approach has been used to prepare zinc oxide with photo-luminescent and complex enhanced photoluminescence has been observed by assembling the nanocrystal silicon and the zinc oxide. These results present some references to manufacture silicon based quantum effect devices, electronics or photo-electronics.devices. Fifteen related papers have been published and nine of them have been indexed by SCI or EI. We attended The 8th IUMRS International Conference on Electronic Materials in Xi’an in June 10-14,2002.

采用热氧化中加氧化氮或氨和反应磁控溅射的方法在硅单晶衬底上生长硅氧氮介质薄膜，通过自组装单层膜表面修饰构成联胺配位体，通过化学方法实现纳米级铂，镍，铜金属岛的自组装，利用扫描隧道显微镜和原子力显微镜研究这种微结构的表面和界面的动力学过程和电子输运特性。为实现常温条件下工作的纳米器件（单电子器件），探索新的组装方法。..