基于臭氧技术的Ge基高介电常数栅介质MOS器件的基础研究：界面特性、栅电荷分布及起源、迁移率散射机制

Ge based MOSFET with high dielectric constant insulator and metal gate is a main research field for the 10 nm CMOSFET device technology node and beyond. Even though there have been lots of research about this field, there are still some problems which need to be investigated. These problems contain: interfacial characteristics, the distribution and physical origin of fixed charges in the gate stack and its physical origin, and mechanism of mobility scattering. Based on the above questions, this project investigates the following key scientific questions in the Ge MOSFET based on O3 technology: interfacial characteristics, the distribution and physical origin of fixed charges in the gate stack and its physical origin, and mechanism of mobility scattering. This project deeply investigates the growth kinetics of sub Ge oxide (GeOx) by O3 oxidation, then determines the key factor than determines the Ge surface passivation; this project quantitatively analyzes the distribution of the fixed charges and interfacial dipole in the gate stack and its physical origins; this project also investigates the mobility scattering by the fixed charges and interfacial dipole in the gate stack and the interfacial roughness at GeOx/Ge interface. This project will provide technical route for the improvement of device performance.

随着集成电路工艺技术进入10纳米技术节点，Ge基高介电常数栅介质MOS晶体管成为技术发展的主流方向之一。尽管针对Ge基高介电常数栅介质MOS晶体管开展了广泛的研究，但是仍然有一些科学问题亟待更加深入的理解，以推动Ge基的产业应用。这些问题包括：界面特性的深入理解；栅结构的电荷和缺陷的定量分布以及物理起源的深入理解；以及迁移率散射机制的深入理解。所以，本课题基于臭氧技术的Ge基高介电常数栅介质MOS器件研究以下关键共性科学问题：界面特性、栅电荷分布及起源、迁移率散射机制。深入理解臭氧技术制备GeOx的微观生长动力学，从原子级调控界面微观结构，找到GeOx钝化Ge界面的关键因素；定量分析栅结构的电荷和偶极子分布，探究其物理起源；深入理解栅结构的电荷和偶极子分布的库仑散射，以及界面层GeOx中Ge的不同价态位置分布所导致的界面粗糙散射。本课题的开展可以为器件性能的改善提供理论指导和技术路线。

随着集成电路工艺技术进入10 nm技术节点，Ge基高介电常数栅介质MOS晶体管成为技术发展的主流方向之一，对延续摩尔定律起到非常重要的作用。尽管针对Ge基高介电常数栅介质MOS晶体管开展了广泛的研究，但是仍然有一些科学和技术问题亟待更加深入的理解，以推动Ge基的产业应用。其中一个关键共性科学问题是界面特性的深入理解。所以，本课题基于臭氧氧化技术的Ge基高介电常数栅介质MOS器件研究以下关键共性科学问题：界面特性。本课题深入研究了臭氧氧化技术制备GeOx的微观生长动力学，从原子级调控界面微观结构，找到了GeOx钝化Ge界面的关键因素：即Ge3+原子是钝化Ge表面的关键因素。本课题的研究结果可以为器件性能的改善提供理论指导和技术路线。