硅／碱锑浅p-n结构阵列的雪崩电子发射和场助光电发射
基本信息
结项摘要
采用微电子技术和真空电子技术进行样品和高纯激活源的制备、真空清洁处理、薄膜蒸制以及真空铯氧激活处理已制备出硅/碱锑浅P-n结阵列，其雪崩电子发射效率已达20%，场助光电发射灵敏度已达850μA/tm。采用WF、SEM、SIMS、XPS对其进行分析测试，探讨电子发射机理模型。本项目的主要特色与创新之处是将雪崩发射和光电发射有机地统一起来，并使光电材料象元化，强调降低逸出功的作用。这种硅/碱锑浅P-n结阵的材料可应用于真空微电子学中作为电子源、应用于外光电子学中作为光电阴极。这种材料特别适用于平板显示器件中作为扫描调制式面电子束源（彩色平板电视显像板和计算机终端显示板）。
项目摘要
项目成果
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数据更新时间：2023-05-31
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