铁电栅场效应晶体管存储器的单粒子效应研究

Memory has been the core of spacecraft electronic systems, whose performance has become one of the most important parameters to the spacecraft. In the outer space and the radiation environment like nuclear explosion, the damage of integrated circuits or information change in memory which caused by single event effects (SEE) will lead to collapse of the entire system with disastrous consequences. Due to the excellent properties such as high storage density, low voltage, low cost, low power consumption, small unit size, natural radiation endurance and compatible process with standard CMOS process, ferroelectric memory has been increasingly focused by the academia and industry (especially the military) in recent years. This application project is intended to carry out a systematic research on the SEE of ferroelectric-gate field effect transistor (FeFET), mainly about SEU, SET, MBU, by means of 3D and TCAD simulation on device/circuit levels, combined with Monte Carlo simulation. According to the idea of "material-device-circuit-chip", a radiation damage mechanism of FeFET memory will be investigated in detail, and a theoretical model of torelance to SEE and some effective measurements of radiation hardness will be carried out, which is expected to provide a scientific basis for developing SEE hardened ferroelectric memory with high performance and its large-scale applications.

存储器作为航天器电子系统的核心，其性能已成为航天器性能的主要衡量指标之一。在外层空间及核爆等辐照环境中，由单粒子效应引起的集成电路本身损坏或存储器信息变化，会导致整个系统崩溃，造成灾难性后果。铁电存储器由于具有信息高密度存储、快速擦写、低电压、低成本、低损耗、小体积和天然的抗辐照性能等显著优点，且制备工艺与标准CMOS工艺基本兼容，日益成为学术界、产业界(特别是军方)关注和研究的热点。本申请项目拟对铁电栅场效应晶体管(FeFET)存储器的单粒子效应(主要针对SEU、SET、MBU)进行系统研究，利用TCAD和3D器件仿真软件、结合蒙特卡罗模拟，按照"材料、器件、电路、芯片"的思路，深入探讨FeFET存储器的辐照损伤机理、建立抗单粒子效应的理论模型、提出高效的抗辐照加固措施，为研制抗单粒子效应的高性能铁电存储器及其大规模应用提供科学依据。

与传统的非挥发性半导体存储器相比，铁电存储器(FeRAM)具有极低的功耗和天然的抗辐射能力，在军事和民用领域具有广阔的应用前景，特别适合于空间和航天技术应用。铁电栅场效应晶体管存储器(FeFET)是FeRAM其中的一类，除了具有铁电存储器已有的优点以外，还具有存储单元尺寸更小、存储密度更高、编程电压更低、编程速度更快、非常适合嵌入式CMOS技术等突出优点，是未来铁电存储器的发展方向。主要研究内容：(a)从实验和理论两方面研究了铁电场效应晶体管(FeFET)的总剂量效应和单粒子效应、辐射损伤机理及抗辐射加固技术；(b) 探究了铁电场效应晶体管的单粒子效应敏感区域，根据其单粒子瞬态响应特点提出了两种不同的抗单粒子加固措施；(c) 开展了SOI器件总剂量辐照效应及其背栅加固技术研究；(d) 与国防科技大学合作，采用CMOS技术，设计了3款芯片(适用于直播卫星业务的多标准射频接收机芯片(0.13 µm工艺)、可同时兼容四大导航系统(GPS/Glonass/Galileo/Compass)的可配置射频接收机芯片(55 nm工艺)、满足国军标前向通信链路的标签芯片(0.18 µm工艺))并成功流片。研究成果为铁电存储器的设计开发和实际应用提供新的思路和科学依据。发表SCI收录论文16篇，申请国家发明专利9个，培养博士研究生1名、硕士研究生8名，参加学术交流19次。