双金属氧化物赝电容行为的机理研究

The effect of intrinsic structure on pseudo-capacitive property is one of the most important and basic scientific problem for metal oxide, however, this study is not involved by many researchers. In order to study the above problem, binary metal oxides were employed, and defined by using A element (with low quantivalency) and B element (with high quantivalency) in our project. By controlling their intrinsic structure by adjusting the A, B elements and their ratios, and even changing the preparation conditions, the relations between the intrinsic structures (crystal texture, cell parameter, crystallinity, density, molecular weight, and element quantivalency) and the pseudo-capacitive properties (specific capacitance, rate capability, and cycling performance) will be systematically studied. This is to clarify that how A and B element affect the pseudo-capacitive properties of binary metal oxides. What is more, Ni3V2O8/Co3V2O8 composite with excellent pseudo-capacitive properties will be designed and synthesized by using two advanced binary metal oxides, Ni3V2O8 and Co3V2O8. This study aims at revealing the main factors which might affect the pseudo-capacitive properties of binary metal oxides, clarifying the relations between intrinsic structures and pseudo-capacitive properties, and paving the way for designing of high performance pseudo-capacitive materials in future.

金属氧化物的本征结构对其赝电容性能的影响机理是一个非常重要的基础科学问题，但迄今为止很少有研究者涉及。为了开展上述研究，本项目以"双金属氧化物"为研究对象，首次在该领域提出以A端元素（低价元素）和B端元素（高价元素）来定义双金属氧化物，通过改变A端元素和B端元素的种类、含量，以及制备条件，调控其本征结构在一定范围内发生改变，系统研究其本征结构（晶体结构、晶胞参数、结晶度、密度、分子量、活性元素的价态等）与其赝电容行为（比容量、倍率性能、循环稳定性）的关系，搞清A端元素和B端元素对其赝电容性能的影响机理，并以性能最优的两个双金属氧化物Ni3V2O8和Co3V2O8为基础，设计制备具有优异超级电容性能的Ni3V2O8/Co3V2O8复合物。通过该研究工作，力图解揭示影响材料赝电容性能的主要因素，阐明材料本征结构与其超级电容性能的关系，为进一步设计制备高性能的赝电容电极材料打下基础。

金属氧化物的本征结构对其赝电容性能的影响机理是一个非常重要的基础科学问题。本项目以双金属氧化物为研究对象，提出以A端元素（低价元素）和B端元素（高价元素）来定义双金属氧化物。通过改变A端元素和B端元素的种类、含量，以及制备条件，调控其本征结构在一定范围内发生改变，系统研究了其本征结构，如晶体结构、晶胞参数、结晶度、密度、分子量、活性元素的价态等等与其赝电容性能之间的关系，基本搞清了A端元素和B端元素对其赝电容性能的影响机理。本项目首先设计制备了ABO4系统和A3B2O8系统并研究了其赝电容机理，在此基础上，对双金属氧化物复合物进行了设计，并对其赝电容展开了系统研究，其中包括ABO4-ABO4系统、A3B2O8-A3B2O8系统和ABO4-A3B2O8系统。除此之外，还对单双金属氧化物复合物进行了设计，主要制备并研究了ABO4-AOx系统和A3B2O8-AOx系统的赝电容。通过该研究工作，揭示了影响双金属氧化物材料赝电容性能的主要因素，基本阐明了材料本征结构与其超级电容性能的关系。