石墨烯基电子器件的超薄高κ栅氧集成研究

Graphene field effect transistor (GFET) meets the requirements of ultra-low power, high-speed microelectronic devices and further scaling of integrated device dimensions due to graphene’s superior physical and electrical properties. It has a promising application in the field of high frequency device, memory, sensors and integrated circuit. However, an important problem needs to be solved first before the grapheme FET can be widely used is the growth of ultra-thin high κ gate oxides on the graphene and not affecting the mobility of graphene.. In this research, focusing on the matter that the graphene cannot form the initial reaction surface before the high k materials deposition and a lot of pinholes appear after the ultra-thin high κ materials deposition due to its chemical inertness, the pre-treatment methods will be studied to form the initial reaction surface on the graphene before the growth of high κ materials. Meanwhile, growth of below 10 nm pinhole free high κ gate materials on graphene will also be investigated. Furthermore, the mechanisms which lead to the mobility degradation for high κ gate dielectric/graphene will be explored. High mobility, high-quality ultra-thin high κ gate oxide/graphene structure will be produced finally.

利用石墨烯优异的物理和电学特性制备的石墨烯基场效应晶体管（GFET）符合未来超低功耗、高速度微电子器件的发展需求和对集成器件尺寸微缩的进一步提高需要，在高频器件、存储器、传感器以及集成电路等领域有着非常诱人的应用前景。但要制造高性能的石墨烯基场效应晶体管并应用于这些领域，就面临着在尽可能不影响石墨烯迁移率的基础上在石墨烯表面进行超薄高κ栅氧的集成的最大挑战。.本项目拟对石墨烯表面的化学惰性不能形成高κ栅氧层初始反应界面和石墨烯表面生长的超薄高κ栅氧层存在大量孔洞问题进行研究。摸索石墨烯生长高κ栅氧层的初始反应界面构建和10 nm以下无孔洞高κ栅氧层在石墨烯表面的生长。研究引起高κ栅介质/石墨烯结构迁移率退化的主要影响因素和机制，最终在石墨烯表面制备出具有高迁移率、高质量的超薄高κ栅氧/石墨烯结构。

利用石墨烯优异的物理和电学特性制备的石墨烯基场效应晶体管（GFET）符合未来超低功耗、高速度微电子器件的发展需求和对集成器件尺寸微缩的进一步提高需要，在高频器件、存储器、传感器以及集成电路等领域有着非常诱人的应用前景。但要制造高性能的石墨烯基场效应晶体管并应用于这些领域，就面临着在尽可能不影响石墨烯迁移率的基础上在石墨烯表面进行超薄高κ栅氧的集成的最大挑战。. 本项目对石墨烯表面的化学惰性不能形成高κ栅氧层初始反应界面和石墨烯表面生长的超薄高κ栅氧层存在大量孔洞问题进行了研究。获得了高质量高介电常数栅/石墨烯结构的预处理及ALD制备工艺，研究了ALD初始反应界面端的构建、预处理工艺、前驱体的选择等对界面层缺陷的影响，制备出了10nm以下较高质量高κ栅介质/石墨烯结构，表现出了较好的特性。本项目的成功实施将为石墨烯基场效应晶体管(GFET)的产业化应用提供研究支撑，同时，也为后续进一步提升石墨烯基场效应晶体管的性能提供研究基础。