太赫兹器件在片去嵌方法研究

The cutoff frequency of semiconductor devices has exceeded terahertz，which promotes the development of solid-state terahertz monolithic integrated circuits (TMIC). Design of TMIC requires the intrinsic parameters of devices so that the de-embedding becomes an imperial process to remove the effects of unwanted portions of the structure surrounding the devices. However, at terahertz, due to the wavelength shortness, the EM-field transmission no longer comply with TEM characteristics and de-embedding turns into a difficult task at terahertz. . The transmission of electrical signal is in nature the propagation of electromagnetic field conforming to Maxwell's equations. Parasites lay in the propagation of higher-order mode EM-wave. This project plans to analyze the transmission characteristics of EM field in the de-embedding circuits with the aids of multi-mode theory based on mode-matching method and of finite-element numerical technique. Through the research on transmission characteristics of the higher-order TE, TM modes, the relation between these and the geography of the de-embedding circuit is expected to be revealed. Accordingly de-embedding technique will be altered and methods for suppressing the parasitic modes will be established. Finally the de-embedding circuit will be fabricated and tested and the THz on-wafer de-embedding problem is expected to be resolved.

半导体器件的截止频率已经进入到太赫兹频段(0.1-10 THz)，从而推动了以固态器为基础的太赫兹单片集成电路(TMIC)的出现。TMIC的设计需要有器件的本征参数作为依据，因此必须通过去嵌来剔除器件外围的互联寄生。然而，在THz频段，由于波长的缩短，寄生的影响加剧，电磁场的传输已不再遵循在低频段的横向电磁场（TEM）特性，使得去嵌变得非常艰难。. 电信号的传输本质在于基于麦克斯韦方程的电磁场的传播，寄生的本质在于高次模式传输。本项目拟采用基于模式匹配的多模传输理论和基于有限元的数值计算方法对THz去嵌电路中最本质的电磁场传输特性进行分析，研究THz横电(TE)、横磁(TM)等高次模式的传输特性, 探讨其传输特性与频率、电路尺寸之间的关系，得出抑制高次模式降低电路寄生的方法。在此基础上，改进去嵌算法，制作去嵌电路和进行测试验证，实现太赫兹器件在片去嵌。

半导体器件的截止频率已经进入到太赫兹频段(0.1-10 THz)，从而推动了以固态器为基础的太赫兹单片集成电路(TMIC)的出现。TMIC的设计需要有器件的本征参数作为依据，因此必须通过去嵌来剔除器件外围的互联寄生。然而，在THz频段，由于波长的缩短，寄生的影响加剧，电磁场的传输已不再遵循在低频段的横向电磁场（TEM）特性，使得去嵌变得非常艰难。电信号的传输本质在于基于麦克斯韦方程的电磁场的传播，寄生的本质在于高次模式传输。本项目拟采用基于模式匹配的多模传输理论和基于有限元的数值计算方法对THz去嵌电路中最本质的电磁场传输特性进行分析，研究THz横电(TE)、横磁(TM)等高次模式的传输特性, 探讨其传输特性与频率、电路尺寸之间的关系，得出抑制高次模式降低电路寄生的方法。在此基础上，改进去嵌算法，制作去嵌电路和进行测试验证，实现太赫兹器件在片去嵌。