耐辐照室温氮化镓一维位置灵敏带电粒子探测系统的研制

In order to detect the type and direction of charged particle under high irradiation environments, such as space and accelerator applications, the wide band gap semiconductor GaN based one-dimension position sensitive detection system is proposed in this project. Based on the results of theory design and simulation, the GaN-PIN strip detector is fabricated on GaN single crystal substrate using MOCVD homo-epitaxial growth method and semiconductor device processing technology. Our patented technology will be used to prepare unintentional doped GaN sensitive region with high quality and high resistance characteristics to realize the high efficiency carrier collection. And effort is going to be flung into elaborately design, assemble and debug a novel electronic system adapting to the GaN detector, which could also solve the common problem of small output signal and low signal to noise ratio among wide band gap semiconductor particle detector. When after implementation of this project, the detection model will be set up, the GaN-PIN strip detector will be fabricated, while the electronic system will be developed. Finally, the high performance GaN based one-dimension position sensitive detection system with radiation hard and room temperature operating characteristics will be successfully achieved. It has important scientific significance and great application value for developing semiconductor radiation detection technology and manufacturing our own semiconductor radiation detectors.

为满足空间粒子实验和加速器等高辐照环境下对粒子种类及入射方向的探测需求，本项目拟开展宽带隙半导体GaN一维位置灵敏带电粒子探测系统的研制。在模拟仿真与系统理论设计的基础上，采用MOCVD同质外延技术和半导体工艺技术，在GaN单晶衬底上制备出GaN基PIN微条探测器。提出引入高阻非故意掺杂GaN专利生长技术来制备高质量GaN探测灵敏区，解决探测器的载流子高效收集问题。设计、电装和调试适配于GaN基PIN微条探测器的前端电子学和数据采集电子学，解决宽带隙半导体粒子探测器输出信号小和信噪比低的共性问题。通过本项目的实施，将建立GaN基PIN微条探测器的带电粒子探测模型，制备出GaN基PIN微条探测器，开发出与探测器相适配的电子学部件，进而研制出耐辐照可室温稳定工作的GaN一维位置灵敏带电粒子探测系统，对我国核辐射半导体探测技术发展和半导体探测器的国产化具有重要的科学研究意义和重大的实用价值。

本项目根据空间和加速器等高温、高辐照极端环境下带电粒子种类和入射方向的探测需求，开展了基于宽禁带半导体GaN一维位置灵敏带电粒子探测系统的研制。项目研究过程中完成了探测器对不同类型辐射粒子响应的仿真分析，p区厚度和掺杂浓度对器件电学特性影响的仿真分析。开展了GaN基外延PIN结构器件的制备工艺和器件封装研究。基于蓝宝石衬底不同外延结构的GaN，制备了轻铝掺杂和非故意掺杂的本征区厚度为10微米和20微米的不同结构的P-I-N器件，对不同结构的器件的电学特性和粒子响应进行了探测。轻度掺Al的GaN PIN器件分辨率在50V时可以达到4.2%，这是目前已报道的能量分辨率最好的异质衬底上GaN p-i-n 结构的α粒子探测器的结果。项目还分别开展了单路和多路读出电子学的研制。项目成果对我国核辐射半导体探测技术发展和半导体探测器的国产化具有重要的科学研究意义和重大实用价值。