室温通讯波段硅基电致激光器

Silicon photonics are the key techniques for the next generation communication technology. A silicon light source at communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium ions was believed to be one of the most promising approaches but suffers from the aggregation of erbium ions that are efficient non-radiative centers, formed during the standard rapid thermal treatment. In our previous work, the high temperature annealing was applied to suppress the aggregation of erbium ions. The resultant light emitting efficiency is increased to a record 14% at room temperature, two orders of magnitude higher than the sample treated by the standard rapid thermal annealing. The high temperature annealing-processed Er doped Si samples were further made into light-emitting diodes. Bright electroluminescence with a spectral peak at 1.54 µm from the silicon-based diodes was also observed at room temperature. In this proposal, we plan to first fabricate opticall-pumped silicon microring or microdisk lasers on the SOI wafer using the CMOS-compatible process. Finally, by combining the pn junction with the optically-pumped silicon microring or microdisk lasers, it is promising to develop efficient electrically-pumped room temperature silicon lasers at communication wavelength for the monolithically integrated silicon photonics.

硅基光电子是下一代通信技术的关键技术，但该技术的发展受限于硅基室温通讯波段激光器的成功研制。掺铒硅中的电子-空穴对可通过铒的亚能级复合发射1.54μm（通讯波段）的光波，但其室温时量子效率极低。本课题前期对铒注入的硅衬底进行了特种退火处理，将样品的室温量子效率提高了两个数量级（达到14%），并且突破性地研制成功了室温通讯波段硅基发光二极管。本项目拟进一步在SOI硅片上，利用CMOS兼容工艺，研制圆碟或圆环结构的微型谐振腔，实现光致硅基激光器；在考虑PN结的条件下设计电致激光器的光学和电学结构，通过多步微加工、铒注入和硼磷注入实现室温硅基通讯波段电致激光器，确立我国在硅基光子和光电子领域的领先地位。

硅基光电子是下一代通信技术的关键技术，但该技术的发展受限于硅基室温通讯波段激光 器的成功研制。掺铒硅中的电子-空穴对可通过铒的亚能级复合发射1.54μm（通讯波段）的光波，但其室温时量子效率极低。本课题前期对铒注入的硅衬底进行了特种退火处理，将样品的室温量子效率提高了两个数量级（达到14%），并且突破性地研制成功了室温通讯波段硅基发光二极管。本项目中，我们对绝缘层上硅（SOI）薄膜进行铒氧离子注入掺杂和深冷退火处理，优化提高了其室温通讯波段光致发光效率，并揭示了其高效室温发光机理。在此基础上，采用CMOS兼容工艺研制了基于掺铒SOI的圆环/微盘结构的微型谐振腔，并研制了基于掺铒SOI的室温通讯波段电注入光波导放大器，为掺铒SOI电致激光器的研制奠定了重要基础。该项目有望突破当前硅基光电子技术的瓶颈，确立我国在硅基光子和光电子领域的领先地位。